Patent · US Expired

Semiconductor memory device

US7166900B1 · kind B1 · utility

3Cited by

4References

10Claims

0Family size

Assignees

Infineon Technologies AG · DE
NANYA TECHNOLOGIES CORPORATION · TW

Inventors

Jin Mun · Chicago, US
Wen-Ming Lee · Munich, DE
Rainer Bartenschlager · Kaufbeuren, DE
Christian Sichert · Attenkirchen, DE
Florian Schnabel · Ehrenkirchen, DE

Key dates

Filing date	Aug 17, 2005
Grant date	Jan 23, 2007
Priority date	—
Expiry date	Aug 17, 2025

Classification

Technology area (CPC G)Physics
CPC primaryG11C11/4094
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A semiconductor memory device comprises a temperature dependent voltage source for outputting a voltage at its output in dependence on a temperature measured in the semiconductor memory device. At least one memory cell is provided with at least one first transistor. The first transistor includes a first transistor body, which is connected to the output of said temperature dependent voltage source.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.