Plasma processing apparatus
US7169255B2 · kind B2 · utility
15Cited by
5References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 6, 2003 |
| Grant date | Jan 30, 2007 |
| Priority date | — |
| Expiry date | Aug 20, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32082
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma processing apparatus for providing plasma processing to an object placed inside a processing chamber includes a vacuum chamber, a process gas feeder feeding gas into the vacuum chamber, a wafer electrode disposed within the vacuum chamber for mounting the object, a wafer bias power generator supplying bias voltage to the wafer electrode, and a plasma generator for generating plasma within the vacuum chamber. The wafer bias power generator includes a clip circuit for clipping either a positive-side voltage or a negative-side voltage to a predetermined voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.