Polymer compound, resist material and pattern formation method
US7169530B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 1, 2004 |
| Grant date | Jan 30, 2007 |
| Priority date | — |
| Expiry date | Oct 1, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/167
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The base polymer of a resist material contains a polymer compound including a first unit represented by a general formula of the following Chemical Formula 4 and a second unit represented by a general formula of the following Chemical Formula 5:wherein R1, R2 and R3 are the same or different and are a hydrogen atom, a fluorine atom, or a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20; R4 is a straight-chain alkylene group or a branched or cyclic alkylene group with a carbon number not less than 0 and not more than 20; R5 and R6 are the same or different and are a hydrogen atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20, or a protecting group released by an acid; R7 is a methylene group, an oxygen atom, a sulfur atom or —SO2—; R8, R9, R10 and R11 are the same or different and are a hydrogen atom, a fluorine atom, a hydroxyl group, —OR13, CO2R13, —R2—OR13 or —R12—CO2R13, at least one of R8, R9, R10 and R11 including —OR13, —CO2R13, —R12—OR13 or —R12—CO2R13 (wherein R 2 is a stra…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.