Cutting thin layer(s) from semiconductor material(s)
US7169686B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 1, 2005 |
| Grant date | Jan 30, 2007 |
| Priority date | — |
| Expiry date | Aug 25, 2025 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB23K2103/50
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
An apparatus for cutting at least one thin layer from a substrate or ingot forming element for an electronic or optoelectronic or optical component or sensor. This apparatus includes a device for directing a pulse of energy into the substrate or forming element wherein the pulse has a duration shorter than or of the same order as that needed by a sound wave to pass through the thickness of the weakened zone, and the energy of the pulse is sufficient to cause cleavage to take place in the weakened zone as the energy of the pulse is absorbed therein. The apparatus also includes an assembly for holding or orienting the substrate or ingot forming element so that the energy pulse is completely uniformly directed over the entire surface, through the face and into the substrate or ingot forming element to cause cleavage to take place in the weakened zone as the energy of the pulse is absorbed therein.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.