Forming a dielectric layer using porogens
US7169715B2 · kind B2 · utility
12Cited by
7References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 21, 2003 |
| Grant date | Jan 30, 2007 |
| Priority date | — |
| Expiry date | Mar 21, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/1047
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In one embodiment, the present invention includes introducing a conventional precursor and an organic precursor having an organic porogen into a vapor deposition apparatus; and forming a dielectric layer having the organic porogen on a substrate within the vapor deposition apparatus from the precursors. In certain embodiments, at least a portion of the organic porogen may be removed after subsequent processing, such as dual damascene processing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.