Ion implanters having an arc chamber that affects ion current density
US7170070B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 15, 2005 |
| Grant date | Jan 30, 2007 |
| Priority date | — |
| Expiry date | Sep 15, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31703
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present invention can provide ion implanter devices including an arc chamber including at least a first inner region and a second inner region, an electron emitting device disposed in the arc chamber adjacent the first inner region and adapted to emit electrons, an electron returning device disposed in the arc chamber adjacent the second inner region and adapted to return at least some of the electrons emitted from the electron emitting device into the second inner region; and an electric field and magnetic field generating device adapted to provide a magnetic field to the arc chamber, wherein at least one inner wall of the arc chamber has a convex surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.