Bipolar transistor with collector having an epitaxial Si:C region

US7170083B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Gregory G. Freeman · Hopewell Junction, US
• Marwan H. Khater · New York, US
• Rajendran Krishnasamy · South Burlington, US
• Kathryn T. Schonenberg · Wappingers Falls, US
• Andreas D. Stricker · South Burlington, US

Key dates

• Filing date: Jan 7, 2005
• Grant date: Jan 30, 2007
• Expiry date: Jan 29, 2025

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8503

Abstract

A structure and method where C is incorporated into the collector region of a heterojunction bipolar device by a method which does not include C ion implantation are provided. In the present invention, C is incorporated into the collector by epitaxy in a perimeter trench etched into the collector region to better control the carbon profile and location. The trench is formed by etching the collector region using the trench isolation regions and a patterned layer over the center part of the collector as masks. Then, Si:C is grown using selective epitaxy inside the trench to form a Si:C region with sharp and well-defined edges. The depth, width and C content can be optimized to control and tailor the collector implant diffusion and to reduce the perimeter component of parasitic CCB.