Inventor · South Burlington, VT, US

Andreas D. Stricker

47Patents
9h-index
63Co-inventors
78Inventor score

Filing activity: Jan 15, 2003 → Oct 13, 2022

Most-cited inventions

PatentTitleAreaCited byStatus
US6864560B2 Bipolar transistor structure with a shallow isolation extension region providing reduced parasitic capacitance Electricity 31 Expired
US7888745B2 Bipolar transistor with dual shallow trench isolation and low base resistance Electricity 18 Active
US6809024B1 Method to fabricate high-performance NPN transistors in a BiCMOS process Electricity 16 Expired
US6906401B2 Method to fabricate high-performance NPN transistors in a BiCMOS process Electricity 15 Expired
US7002221B2 Bipolar transistor having raised extrinsic base with selectable self-alignment and methods of forming same Electricity 15 Expired
US7932541B2 High performance collector-up bipolar transistor Electricity 12 Active
US10444433B1 Waveguides including a patterned dielectric layer Physics 10 Active
US7253096B2 Bipolar transistor having raised extrinsic base with selectable self-alignment and methods of forming same Electricity 10 Expired
US6965133B2 Method of base formation in a BiCMOS process Electricity 10 Expired
US7709930B2 Tuneable semiconductor device with discontinuous portions in the sub-collector Electricity 9 Expired
US7180157B2 Bipolar transistor with a very narrow emitter feature Electricity 8 Expired
US8908334B1 Electrostatic discharge protection for a magnetoresistive sensor Electricity 8 Active
US7170083B2 Bipolar transistor with collector having an epitaxial Si:C region Electricity 6 Expired
US7136268B2 Tunable ESD trigger and power clamp circuit Electricity 6 Expired
US6858485B2 Method for creation of a very narrow emitter feature Electricity 6 Expired
US8405186B2 Transistor structure with a sidewall-defined intrinsic base to extrinsic base link-up region and method of forming the structure Electricity 5 Active
US7696034B2 Methods of base formation in a BiCOMS process Electricity 5 Active
US6844225B2 Self-aligned mask formed utilizing differential oxidation rates of materials Emerging Cross-Sectional Technologies 4 Expired
US10770412B2 Guard ring for photonic integrated circuit die Electricity 3 Active
US7390721B2 Methods of base formation in a BiCMOS process Electricity 3 Active
US9978743B1 Voltage balanced stacked clamp Electricity 2 Active
US7442595B2 Bipolar transistor with collector having an epitaxial Si:C region Electricity 2 Active
US7288827B2 Self-aligned mask formed utilizing differential oxidation rates of materials Emerging Cross-Sectional Technologies 2 Expired
US8586423B2 Silicon controlled rectifier with stress-enhanced adjustable trigger voltage Physics 2 Active
US10003191B2 Space efficient and power spike resistant ESD power clamp with digitally timed latch Electricity 1 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.