Method of manufacturing semiconductor light emitting device
US7172429B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 6, 2006 |
| Grant date | Feb 6, 2007 |
| Priority date | — |
| Expiry date | Jan 6, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention provides a semiconductor light emitting device where a spatial change in an In composition ratio is small within a plane of an active layer and device properties such as efficiency of light emission are excellent, and a manufacturing method thereof. An active layer having an InGaN quantum well structure is formed in such a manner that a ratio of a photoluminescence light emission intensity at 300 K to a photoluminescence light emission intensity at 5 K becomes 0.1 or less. The ratio of the photoluminescence light emission intensity reflects the degree of the spatial change in an In composition ratio in a quantum confined structure. In addition, a smaller value indicates a higher spatial uniformity in the In composition ratio. Therefore, there is greater spatial uniformity in the In composition ratio in the active layer, increasing the probability of radiative recombination of carriers occurring, by making the ratio of photoluminescence light emission intensity 0.1 or less; thus, it becomes possible to obtain a semiconductor light emitting device having high efficiency in light emission.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.