Nobuyuki Tomita
20Patents
4h-index
31Co-inventors
59Inventor score
Filing activity: Mar 15, 2004 → Jun 15, 2016
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7259408B2 | Avalanche photodiode | Electricity | 8 | Expired |
| US7462889B2 | Avalanche photodiode | Electricity | 8 | Expired |
| US7187013B2 | Avalanche photodiode | Emerging Cross-Sectional Technologies | 7 | Expired |
| US7038251B2 | Semiconductor device | Electricity | 5 | Expired |
| US8569106B2 | Method for manufacturing silicon carbide semiconductor device | Electricity | 4 | Active |
| US7187701B2 | Ridge waveguide semiconductor laser | Electricity | 4 | Expired |
| US9988738B2 | Method for manufacturing SiC epitaxial wafer | Electricity | 3 | Active |
| US7345325B2 | Avalanche photodiode | Emerging Cross-Sectional Technologies | 2 | Active |
| US8916880B2 | Silicon carbide epitaxial wafer and semiconductor device | Electricity | 1 | Active |
| US7763486B2 | Method for manufacturing nitride semiconductor stacked structure and semiconductor light-emitting device | Electricity | 1 | Active |
| US7923742B2 | Method for production of a nitride semiconductor laminated structure and an optical semiconductor device | Electricity | 1 | Active |
| US9422640B2 | Single-crystal 4H-SiC substrate | Emerging Cross-Sectional Technologies | 1 | Active |
| US7172429B2 | Method of manufacturing semiconductor light emitting device | Electricity | 0 | Expired |
| US9722017B2 | Silicon carbide semiconductor device | Electricity | 0 | Active |
| US9903048B2 | Single-crystal 4H-SiC substrate | Emerging Cross-Sectional Technologies | 0 | Active |
| US7632695B2 | Semiconductor device manufacturing method | Electricity | 0 | Active |
| US9564315B1 | Manufacturing method and apparatus for manufacturing silicon carbide epitaxial wafer | Chemistry; Metallurgy | 0 | Active |
| US9957638B2 | Method for manufacturing silicon carbide semiconductor device | Electricity | 0 | Active |
| US8679952B2 | Method of manufacturing silicon carbide epitaxial wafer | Electricity | 0 | Active |
| US9752254B2 | Method for manufacturing a single-crystal 4H—SiC substrate | Emerging Cross-Sectional Technologies | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.