Method of making uniform oxide layer
US7172914B1 · kind B1 · utility
1Cited by
19References
19Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 2, 2001 |
| Grant date | Feb 6, 2007 |
| Priority date | — |
| Expiry date | Jan 23, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02271
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a semiconductor structure includes forming an isolation region in a semiconductor substrate. A first oxide layer is on the substrate, a first sacrificial layer is on the first oxide layer, and a first nitride layer is on the first sacrificial layer. The first oxide layer may be a screen oxide layer, and the method provides consistency in the thickness of the screen oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.