CMOS image sensor array with black pixel using negative-tone resist support layer
US7172922B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 19, 2002 |
| Grant date | Feb 6, 2007 |
| Priority date | — |
| Expiry date | Nov 18, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8057
Abstract
A “black” pixel for measuring dark current is produced using carbon-based or pigment-based black photosensitive resist deposited on a support layer that is formed using negative-tone photosensitive resist, both being formed over the light sensitive portion of the black pixel. After an array of pixels is fabricated, a negative-tone resist layer is deposited on the upper insulator formed over the pixels, and a region of the negative-tone resist located over the black pixel is exposed using a first mask. A carbon-based resist layer is deposited on the negative-tone resist layer, and a region of the carbon-based resist located over the black pixel is exposed using a second mask. The negative-tone and carbon-based resists are then developed to remove portions of the layers not located over the black pixel.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.