Lateral lubistor structure and method
US7173310B2 · kind B2 · utility
34Cited by
10References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 2, 2005 |
| Grant date | Feb 6, 2007 |
| Priority date | — |
| Expiry date | Jun 2, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/201
Abstract
An ESD LUBISTOR structure based on FINFET technology employs a vertical fin (a thin vertical member containing the source, drain and body of the device) in alternatives with and without a gate. The gate may be connected to the external electrode being protected to make a self-activating device or may be connected to a reference voltage. The device may be used in digital or analog circuits.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.