Inventor · Stormville, NY, US

Jack A. Mandelman

41Patents
19h-index
43Co-inventors
77Inventor score

Filing activity: Dec 2, 1994 → Jul 5, 2007

Most-cited inventions

PatentTitleAreaCited byStatus
US6825529B2 Stress inducing spacers Electricity 148 Expired
US6717216B1 SOI based field effect transistor having a compressive film in undercut area under the channel and a method of making the device Electricity 148 Expired
US6974981B2 Isolation structures for imposing stress patterns Electricity 105 Expired
US6534807B2 Local interconnect junction on insulator (JOI) structure Electricity 71 Expired
US6720630B2 Structure and method for MOSFET with metallic gate electrode Emerging Cross-Sectional Technologies 69 Expired
US5521422A Corner protected shallow trench isolation device Electricity 67 Expired
US6555891B1 SOI hybrid structure with selective epitaxial growth of silicon Electricity 62 Expired
US6320225A SOI CMOS body contact through gate, self-aligned to source- drain diffusions Electricity 59 Expired
US7388259B2 Strained finFET CMOS device structures Electricity 54 Expired
US6780694B2 MOS transistor Electricity 54 Expired
US5643822A Method for forming trench-isolated FET devices Electricity 46 Expired
US5773362A Method of manufacturing an integrated ULSI heatsink Emerging Cross-Sectional Technologies 42 Expired
US6635543B2 SOI hybrid structure with selective epitaxial growth of silicon Electricity 42 Expired
US7485520B2 Method of manufacturing a body-contacted finfet Electricity 38 Active
US7173310B2 Lateral lubistor structure and method Electricity 34 Expired
US5741738A Method of making corner protected shallow trench field effect transistor Electricity 30 Expired
US5614433A Method of fabricating low leakage SOI integrated circuits Emerging Cross-Sectional Technologies 26 Expired
US6544874B2 Method for forming junction on insulator (JOI) structure Electricity 22 Expired
US5729052A Integrated ULSI heatsink Emerging Cross-Sectional Technologies 21 Expired
US6335248B1 Dual workfunction MOSFETs with borderless diffusion contacts for high-performance embedded DRAM technology Electricity 19 Expired
US6806534B2 Damascene method for improved MOS transistor Electricity 18 Expired
US6884667B1 Field effect transistor with stressed channel and method for making same Electricity 18 Expired
US6562666B1 Integrated circuits with reduced substrate capacitance Electricity 17 Expired
US7374987B2 Stress inducing spacers Electricity 17 Expired
US6686637B1 Gate structure with independently tailored vertical doping profile Electricity 13 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.