Light-emitting semiconductor device with a built-in overvoltage protector
US7173311B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 2, 2005 |
| Grant date | Feb 6, 2007 |
| Priority date | — |
| Expiry date | Feb 2, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3025
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An overvoltage-proof light-emitting diode has a lamination of light-generating semiconductor layers on a first major surface of a silicon substrate. A front electrode in the form of a bonding pad is mounted centrally atop the light-generating semiconductor layers whereas a back electrode covers a second major surface of the substrate. An overvoltage protector, of which several different forms are disclosed, is disposed between the bonding pad and the second major surface of the substrate. The bonding pad and back electrode serves as electrodes for both LED and overvoltage protector. As seen from above the device, or in a direction normal to the first major surface of the substrate, the overvoltage protector lies substantially wholly beneath the bonding pad.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.