Koji Otsuka
64Patents
10h-index
75Co-inventors
81Inventor score
Filing activity: May 9, 1977 → Sep 21, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4101449A | Catalyst and its method of preparation | Emerging Cross-Sectional Technologies | 62 | Expired |
| US7714360B2 | Surface-stabilized semiconductor device | Electricity | 57 | Active |
| US9651888B2 | Electroconductive member with a surface layer including a porous body having a continuous open pore | Physics | 31 | Active |
| USD642484S1 | Container | General | 30 | Expired |
| USD642937S1 | Container | General | 29 | Expired |
| US6667081B1 | Pouch and method of producing film for pouch | Emerging Cross-Sectional Technologies | 20 | Expired |
| USD643310S1 | Container | General | 18 | Expired |
| US7173311B2 | Light-emitting semiconductor device with a built-in overvoltage protector | Electricity | 18 | Expired |
| USD643309S1 | Container | General | 17 | Expired |
| USD627330S1 | Amplifier | General | 16 | Expired |
| US7998645B2 | Method for finishing surface of preliminary polished glass substrate | Emerging Cross-Sectional Technologies | 10 | Active |
| US7518154B2 | Nitride semiconductor substrate and semiconductor element built thereon | Electricity | 8 | Expired |
| US7622050B2 | Process for polishing glass substrate | Chemistry; Metallurgy | 7 | Active |
| US7456435B2 | Light-emitting semiconductor device | Electricity | 6 | Expired |
| US7400000B2 | Nitride-based semiconductor device | Electricity | 6 | Active |
| US7491983B2 | Nitride-based semiconductor device of reduced current leakage | Electricity | 6 | Active |
| US8460843B2 | Method for finishing surface of preliminary polished glass substrate | Emerging Cross-Sectional Technologies | 6 | Active |
| US8002468B2 | Bag with pouring spout | Emerging Cross-Sectional Technologies | 6 | Active |
| US7692298B2 | III-V nitride semiconductor device comprising a concave shottky contact and an ohmic contact | Electricity | 5 | Active |
| US7745850B2 | Nitride-based semiconductor device with reduced leakage current | Electricity | 5 | Active |
| US6431956B1 | Surface treatment in a fabrication of a multilayered chip component | Electricity | 5 | Expired |
| US8748786B2 | Multi-component food packaging for microwave oven | Performing Operations; Transporting | 5 | Active |
| US7803280B2 | Method for finishing surface of preliminary polished glass substrate | Emerging Cross-Sectional Technologies | 4 | Active |
| US7675076B2 | Nitride-based semiconductor device of reduced voltage drop | Electricity | 3 | Expired |
| US7186620B2 | Method of making substrates for nitride semiconductor devices | Electricity | 3 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.