Method for reducing defect concentrations in crystals
US7175704B2 · kind B2 · utility
82Cited by
6References
20Claims
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Key dates
| Filing date | Jun 5, 2003 |
| Grant date | Feb 13, 2007 |
| Priority date | — |
| Expiry date | Mar 31, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1008
- WIPO fieldChemical engineering
- WIPO sectorChemistry
Abstract
A method for removing defects at high pressure and high temperature (HP/HT) or for relieving strain in a non-diamond crystal commences by providing a crystal, which contains defects, and a pressure medium. The crystal and the pressure medium are disposed in a high pressure cell and placed in a high pressure apparatus, for processing under reaction conditions of sufficiently high pressure and high temperature for a time adequate for one or more of removing defects or relieving strain in the single crystal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.