Electrostatic chucking stage and substrate processing apparatus
US7175737B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 15, 2003 |
| Grant date | Feb 13, 2007 |
| Priority date | — |
| Expiry date | Oct 9, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T279/23
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
This application discloses the structure of an ESC stage where a chucking electrode is sandwiched by a moderation layer and a covering layer. The moderation layer and the covering layer have the thermal expansion coefficients between the dielectric plate and the chucking electrode. This application also discloses optimum total thickness of the ESC stage, optimum volume ratio of composite which the moderation layer is made of, and an optimum range of the thermal expansion coefficient of the composite. This application further discloses a substrate processing apparatus for carrying out a process onto a substrate as the substrate is maintained at a temperature higher than room temperature, comprising the electrostatic chucking stage for holding the substrate during the process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.