PAA-based etchant, methods of using same, and resultant structures
US7176041B2 · kind B2 · utility
21Cited by
14References
17Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 29, 2004 |
| Grant date | Feb 13, 2007 |
| Priority date | — |
| Expiry date | Oct 29, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A wet-etch composition may include: peracetic acid (PAA); and a fluorinated acid; a relative amount of the PAA in the composition being sufficient to ensure an etch rate of (P-doped-SiGe):(P-doped-Si) that is substantially the same as an etch rate of (N-doped-SiGe):(N-doped-Si). Such a wet-etch composition is hereafter referred to as a PAA-based etchant and can be used to make, e.g., a CMOS MBCFET, an electrode of a capacitor, etc.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.