Method for depositing polycrystalline SiGe suitable for micromachining and devices obtained thereof

US7176111B2 · kind B2 · utility

Assignee

• INTERUNIVERSITAIR MICRO-ELECTRONICA CENTRUM VZW · BE

Inventors

• Kris Baert · Leuven, BE
• Matty Caymax · Leuven, BE
• Cristina Rusu · Leuven, BE
• Sherif Sedky · Giza, EG
• Ann Witvrouw · Herent, BE

Key dates

• Filing date: Oct 3, 2002
• Grant date: Feb 13, 2007
• Expiry date: Jun 15, 2023

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

Method and apparatus to obtain as-deposited polycrystalline and low-stress SiGe layers. These layers may be used in Micro Electro-Mechanical Systems (MEMS) devices or micromachined structures. Different parameters are analysed which effect the stress in a polycrystalline layer. The parameters include, without limitation: deposition temperature; concentration of semiconductors (e.g., the concentration of Silicon and Germanium in a SixGe1−x layer, with x being the concentration parameter); concentration of dopants (e.g., the concentration of Boron or Phosphorous); amount of pressure; and use of plasma. Depending on the particular environment in which the polycrystalline SiGe is grown, different values of parameters may be used.