Technique for high-efficiency ion implantation
US7176470B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 22, 2005 |
| Grant date | Feb 13, 2007 |
| Priority date | — |
| Expiry date | Dec 22, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31703
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A technique for high-efficiency ion implantation is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus for high-efficiency ion implantation. The apparatus may comprise one or more measurement devices to determine a shape of an ion beam spot in a first dimension and a second dimension. The apparatus may also comprise a control module to control movement of the ion beam across a substrate according to a two-dimensional velocity profile, wherein the two-dimensional velocity profile is determined based at least in part on the shape of the ion beam spot, and wherein the two-dimensional velocity profile is tunable to maintain a uniform ion dose and to keep the ion beam spot from going fully off the substrate surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.