Nitride compound semiconductor element
US7176479B2 · kind B2 · utility
16Cited by
48References
13Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 9, 2004 |
| Grant date | Feb 13, 2007 |
| Priority date | — |
| Expiry date | Feb 9, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/01335
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A nitride compound semiconductor element having improved characteristics, productivity and yield. A nitride compound semiconductor element includes: a sapphire substrate; a first single crystalline layer of AlN formed on said sapphire substrate; a second single crystalline layer formed on said first single crystalline layer, said second single crystalline layer being made of AlxGa1-xN (0.8≦x≦0.97) and having a thickness of equal to or more than 0.3 μm and equal to or less than 6 μm; and a device structure section of a nitride semiconductor formed on said second single crystalline layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.