Light-emitting semiconductor device having a quantum well active layer, and method of fabrication
US7176480B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 5, 2005 |
| Grant date | Feb 13, 2007 |
| Priority date | — |
| Expiry date | May 14, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/812
Abstract
A light-emitting diode has a low-resistivity silicon substrate on which there are laminated a buffer layer, an n-type lower confining layer, an active layer of multiple quantum well configuration, and a p-type upper confining layer. The active layer is constituted of cyclic alternations of a barrier sublayer of InGaN, a first complementary sublayer of AlGaInN, a well sublayer of InGaN, and a second complementary sublayer of AlGaInN. The proportions of the noted ingredients of the active sublayers are all specified. The first and the second complementary sublayers prevent the evaporation or diffusion of indium from the neighboring sublayers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.