Temperature sensor for high power very large scale integration circuits
US7176508B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 27, 2004 |
| Grant date | Feb 13, 2007 |
| Priority date | — |
| Expiry date | Apr 6, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a temperature sensor for an integrated circuit having at least one field effect transistor (FET) having a polysilicon gate, in which a current and a voltage is supplied to the polysilicon gate, changes in the current and the voltage of the polysilicon gate are monitored, wherein the polysilicon gate of the at least one FET is electrically isolated from other components of the integrated circuit, and the changes in the current or voltage are used to calculate a change in resistance of the polysilicon gate, and the change in resistance of the polysilicon gate is used to calculate a temperature change within the integrated circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.