Semiconductor device having high drive current and method of manufacturing thereof
US7176522B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 11, 2004 |
| Grant date | Feb 13, 2007 |
| Priority date | — |
| Expiry date | Aug 11, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/017
Abstract
A method comprises forming a first semiconductor device in a substrate, where the first semiconductor device comprises a gate structure, a spacer disposed on sidewalls of the gate structure, the spacer having a first thickness, and raised source and drain regions disposed on either side of the gate structure. The method further comprises forming a second semiconductor device in the substrate and electrically isolated from the first semiconductor device, where the second semiconductor device comprises a gate structure, a spacer disposed on sidewalls of the gate structure, the spacer having a second thickness less than the first thickness of the spacer of the first semiconductor device, and recessed source and drain regions disposed on either side of the gate structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.