Semiconductor device having deep trench charge compensation regions and method
US7176524B2 · kind B2 · utility
55Cited by
21References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 15, 2005 |
| Grant date | Feb 13, 2007 |
| Priority date | — |
| Expiry date | Feb 15, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/518
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In one embodiment, a semiconductor device is formed in a body of semiconductor material. The semiconductor device includes a charge compensating trench formed in proximity to active portions of the device. The charge compensating trench includes a trench filled with various layers of semiconductor material including opposite conductivity type layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.