Reading extended data burst from memory
US7177999B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 28, 2003 |
| Grant date | Feb 13, 2007 |
| Priority date | — |
| Expiry date | Dec 22, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C7/1027
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for reading, from a semiconductor memory, data having a data burst length greater than two includes, beginning at a first time, receiving, on an address bus, a first address part associated with memory cells to be addressed. At a second time that is later than the first time, a read command is placed on a command bus to initiate read access to the first memory cells and a second address part associated with memory cells to be addressed is received on the address bus. Beginning at a third time that is later than the second time, data associated with the first and second address parts is transferred to a data bus.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.