Halftone phase shift mask blank, and method of manufacture
US7179545B2 · kind B2 · utility
17Cited by
8References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 7, 2003 |
| Grant date | Feb 20, 2007 |
| Priority date | — |
| Expiry date | Apr 30, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/68
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A halftone phase shift mask blank has a phase shifter film on a transparent substrate. The phase shifter film is composed of a metal silicide compound containing Mo, at least one metal selected from Ta, Zr, Cr and W, and at least one element selected from O, N and C. The halftone phase shift mask blank has improved processability and high resistance to chemicals, especially to alkaline chemicals.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.