Wafer processing method
US7179723B2 · kind B2 · utility
122Cited by
2References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 12, 2004 |
| Grant date | Feb 20, 2007 |
| Priority date | — |
| Expiry date | Nov 12, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67092
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A laser beam processing method for processing a wafer by applying a laser beam to a predetermined area, comprising the steps of forming a resin film which absorbs a laser beam, on the surface to be processed of the wafer; applying a laser beam to the surface to be processed of the wafer through the resin film; and removing the resin film after the laser beam application step.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.