Semiconductor device and a method of manufacturing the same

US7179737B2 · kind B2 · utility

Assignee

• Renesas Technology Corporation · JP

Inventors

• Akio Nishida · Yokkaichi, JP
• Kazuhito Ichinose · Tokyo, JP
• Hiraku Chakihara · Akishima, JP

Key dates

• Filing date: Jul 30, 2004
• Grant date: Feb 20, 2007
• Expiry date: Dec 6, 2024

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B12/485

Abstract

In a semiconductor device, the ohmic contact at the junction between the metal interconnection and the semiconductor layer is lowered by depositing a first conductor layer comprised of, for example, tungsten nitride and a second conductor layer comprised of, for example, tungsten silicide successively from the lower layer so as to cover the upper surface of intermediate conductive layers comprised of a metal, for example, tungsten as a main interconnection material, subsequently introducing an impurity, for example, boron (b) to the second conductor layer, then patterning the first and the second conductor layers thereby forming a conductor layer, and then forming a lower semiconductor layer comprised of, for example, polycrystal silicon for forming a semiconductor region for source and drain of load MISFET of SRAM so as to be in contact with the conductor layer.