Dry etching method
US7179752B2 · kind B2 · utility
0Cited by
4References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 5, 2002 |
| Grant date | Feb 20, 2007 |
| Priority date | — |
| Expiry date | Jun 17, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0276
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A dry etching method involves plasma etching an organic anti-reflecting coating film through a mask layer made of photoresist and having a predetermined pattern by using an etching gas of CF4 and O2. The method allows an organic anti-reflecting coating film to be etched such that the etched film exhibits a side wall portion having a better shape as compared with that formed by a conventional technique.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.