Bilayer cap structure including HDP/bHDP films for conductive metallization and method of making same
US7179760B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 27, 2005 |
| Grant date | Feb 20, 2007 |
| Priority date | — |
| Expiry date | May 27, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a bilayer cap structure for interconnect structures that comprise copper metallization or other conductive metallization. Such bilayer cap structure includes a first cap layer formed by an unbiased high density plasma (HDP) chemical vapor deposition process, and a second cap layer over the first cap layer, where the second cap layer is formed by a biased high density plasma (bHDP) chemical vapor deposition process. During the bHDP chemical vapor deposition process, a low AC bias power is applied to the substrate to increase the ion bombardment on the substrate surface and to induce resputtering of the capping material, thereby forming a seamless second cap layer with excellent reactive ion etching (RIE) selectivity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.