Enhanced RESURF HVPMOS device with stacked hetero-doping RIM and gradual drift region
US7180132B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 16, 2004 |
| Grant date | Feb 20, 2007 |
| Priority date | — |
| Expiry date | Jan 24, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/663
Abstract
An HV PMOS device formed on a substrate having an HV well of a first polarity type formed in an epitaxial layer of a second polarity type includes a pair of field oxide regions on the substrate and at least partially over the HV well. Insulated gates are formed on the substrate between the field oxide regions. Stacked hetero-doping rims are formed in the HV well and in self-alignment with outer edges of the gates. A buffer region of the first polarity type is formed in the HV well between and in self-alignment with inner edges of the gates. A drift region of the second polarity type is formed in the buffer region between and in self-alignment with inner edges of the gates. The drift region includes a region having a gradual dopant concentration change, and includes a drain region of the second polarity type.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.