Ferroelectric capacitor with parallel resistance for ferroelectric memory
US7180141B2 · kind B2 · utility
27Cited by
33References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 3, 2004 |
| Grant date | Feb 20, 2007 |
| Priority date | — |
| Expiry date | Dec 3, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/696
Abstract
Ferroelectric memory cells (3) are presented, in which a cell resistor (R) is integrated into the cell capacitor (C) to inhibit charge accumulation or charge loss at the cell storage node (SN) when the cell (3) is not being accessed while avoiding significant disruption of memory cell access operations. Methods (100, 200) are provided for fabricating ferroelectric memory cells (3) and ferroelectric capacitors (C), in which a parallel resistance (R) is integrated in the capacitor ferroelectric material (20) or in an encapsulation layer (46) formed over the patterned capacitor structure (C).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.