Plasma processing method
US7182879B2 · kind B2 · utility
0Cited by
12References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 9, 2004 |
| Grant date | Feb 27, 2007 |
| Priority date | — |
| Expiry date | Feb 25, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A plasma processing method, in which a process gas is introduced into an evacuated process chamber for subjecting the target object to a plasma processing. The plasma processing method is featured in that at least a part of the process gas exhausted from the process chamber is introduced again into the process chamber. A specified value is obtained by monitoring the state of the plasma of the process gas within the process chamber, and the introducing conditions of the process gas into the process chamber are controlled to adjust a predetermined property value to a regulated value.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.