FinFETs with long gate length at high density

US7183142B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Brent A. Anderson · Jericho, US
• Kerry Bernstein · Underhill, US
• Edward J. Nowak · South Burlington, US

Key dates

• Filing date: Jan 13, 2005
• Grant date: Feb 27, 2007
• Expiry date: Jan 13, 2025

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/215

Abstract

A method of manufacturing fin-type field effect transistors (FinFETs) forms a silicon layer above a substrate, forms a mask pattern above the silicon layer using a multi-step mask formation process, patterns the silicon layer into silicon fins using the mask pattern such that the silicon fins only remain below the mask pattern, removes the mask pattern to leave the fins on the substrate, and forms gate conductors over the fins at a non-perpendicular angle to the fins.