Manufacturing method of semiconductor device
US7183170B2 · kind B2 · utility
2Cited by
1References
21Claims
0Family size
Assignee
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Key dates
| Filing date | Nov 30, 2004 |
| Grant date | Feb 27, 2007 |
| Priority date | — |
| Expiry date | Nov 30, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
After an upper electrode protective film is formed such that it is in a firm contact with ruthenium film of the upper electrode without damaging the ruthenium film, the upper electrode is etched, thereby, a MIM capacitor is obtained in which leak current is not increased due to oxidation of the ruthenium film of the upper electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.