Pyramid-shaped capacitor structure
US7183171B2 · kind B2 · utility
1Cited by
7References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 17, 2005 |
| Grant date | Feb 27, 2007 |
| Priority date | — |
| Expiry date | Oct 17, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/692
Abstract
A capacitor structure which has generally pyramidal or stepped profile to prevent or reduce dielectric layer breakdown is disclosed. The capacitor structure includes a first conductive layer, at least one dielectric layer having a first area provided on the first conductive layer and a second conductive layer provided on the at least one dielectric layer. The second conductive layer has a second area which is less than the first area of the at least one dielectric layer. A method of fabricating a capacitor structure is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.