Method for using ion implantation to treat the sidewalls of a feature in a low-k dielectric film
US7183183B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 23, 2004 |
| Grant date | Feb 27, 2007 |
| Priority date | — |
| Expiry date | Dec 24, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76832
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a mechanically strengthened feature in a low-k dielectric film on a substrate includes using either spin-on-dielectric (SOD) techniques, or chemical vapor deposition (CVD) techniques to form a low-k dielectric film on the substrate. A sidewall of the feature in the low-k dielectric film is then treated in order to increase the film's mechanical strength. Treatment of the sidewall of the feature in the low-k dielectric film comprises forming a hardened layer by subjecting the low-k dielectric film to low energy, high flux ion implantation. Process parameters of the ion implantation are selected such that the implantation process does not cause a substantial change in the dielectric constant of the low-k dielectric film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.