Fabrication of semiconductor devices
US7183206B2 · kind B2 · utility
35Cited by
16References
6Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 11, 2003 |
| Grant date | Feb 27, 2007 |
| Priority date | — |
| Expiry date | Mar 17, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Fabrication of microelectronic devices is accomplished using a substrate having a recessed pattern. In one approach, a master form is used to replicate a substrate having a pit pattern. In another approach, the substrate is produced by etching. A series of stacked layers having desired electrical characteristics is applied to the substrate and planarized in a manner that creates electrical devices and connections therebetween. The microelectronic devices can include a series of row and columns and are used to store data at their intersection.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.