Using selective deposition to form phase-change memory cells
US7183567B2 · kind B2 · utility
12Cited by
7References
15Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 19, 2003 |
| Grant date | Feb 27, 2007 |
| Priority date | — |
| Expiry date | Feb 27, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/90
Abstract
A phase-change memory cell may be formed by selectively depositing the lower electrode in the phase-change memory pore. Thereafter, an adhesion-promoting material may be selectively deposited on the selectively deposited lower electrode and the upper surface surrounding the pore. Through the use of selective deposition techniques, the adhesion-promoting material can be positioned where needed and the lower electrode may be defined in a fashion that may reduce shunting current, reduce device current requirements, and increase dynamic range in some embodiments.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.