High dielectric constant device
US7183604B2 · kind B2 · utility
27Cited by
4References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 10, 2003 |
| Grant date | Feb 27, 2007 |
| Priority date | — |
| Expiry date | Jan 25, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/265
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Dielectric material compositions comprising HfO2 and a second compound are disclosed. The compositions are characterized by at least a part of the compositions being in a cubic crystallographic phase. Further, semiconductor based devices comprising such dielectric material compound and method for forming such compounds are disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.