Structure and method of hyper-abrupt junction varactors

US7183628B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Douglas D. Coolbaugh · Highland, US
• Stephen Furkay · South Burlington, US
• Jeffrey B. Johnson · Hague, US
• Robert M. Rassel · Colchester, US
• David C. Sheridan · Williston, US

Key dates

• Filing date: Dec 7, 2004
• Grant date: Feb 27, 2007
• Expiry date: Mar 2, 2025

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D1/66

Abstract

A method and device providing a HA junction varactor which may be fabricated with a reduced variation in C-V tuning curve from one varactor to the next. The process produces a varactor with an active region formed substantially by doping an Si substrate with various dopants at various energy levels. Accordingly, unit-to-unit device variation is reduced because etching, growing, and deposition processes to make the active portion of the varactor are reduced or eliminated. The resulting HA junction has a more uniform thickness, and a more uniform doping profile.