Flash memory devices and methods for programming the same
US7184308B2 · kind B2 · utility
23Cited by
9References
35Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 14, 2004 |
| Grant date | Feb 27, 2007 |
| Priority date | — |
| Expiry date | Dec 22, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2216/14
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A flash memory device having a memory cell string is programmed. The flash memory device includes a plurality of memory cells. During a programming cycle, application of a program voltage to a channel region of the plurality of memory cells is delaying until after a gate of each of the memory cells of the plurality of memory cells that is to be programmed has reached a programming voltage Vpgm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.