Method of making substrates for nitride semiconductor devices
US7186620B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 23, 2004 |
| Grant date | Mar 6, 2007 |
| Priority date | — |
| Expiry date | Aug 30, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
For fabricating an LED substrate with minimal dislocations in its nitride semiconductor layers, GaN is epitaxially grown into a first formative layer overlying a multilayered buffer region on a silicon substrate. A second formative layer is then formed on the first formative layer by epitaxially growing AlN, at such a rate that interstices are created in the first formative layer by the etching action of the reactor gases in the early stages of the fabrication of the second formative layer. Then the second formative layer is etched away from over the intersticed first formative layer, leaving the interstices open. Then a filler layer of GaN is epitaxially grown on the intersticed first formative layer in interfitting engagement therewith. Dislocations are greatly reduced in active semiconductor layers formed subsequently on the filler layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.