Nitride semiconductor device and method of manufacturing the same
US7187007B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 8, 2005 |
| Grant date | Mar 6, 2007 |
| Priority date | — |
| Expiry date | Feb 8, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/964
Abstract
The present invention provides a nitride semiconductor device. The nitride semiconductor device comprises an n-type nitride semiconductor layer formed on a nitride crystal growth substrate. An active layer is formed on the n-type nitride semiconductor layer. A first p-type nitride semiconductor layer is formed on the active layer. A micro-structured current diffusion pattern is formed on the first p-type nitride semiconductor layer. The current diffusion pattern is made of an insulation material. A second p-type nitride semiconductor layer is formed on the first p-type nitride semiconductor layer having the current diffusion pattern formed thereon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.