Drain-extended MOS transistors with diode clamp and methods for making the same
US7187033B2 · kind B2 · utility
56Cited by
13References
11Claims
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Key dates
| Filing date | Jul 14, 2004 |
| Grant date | Mar 6, 2007 |
| Priority date | — |
| Expiry date | Dec 3, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/811
Abstract
High side extended-drain MOS driver transistors (T2) are presented in which an extended drain (108, 156) is separated from a first buried layer (120) by a second buried layer (130), wherein an internal or external diode (148) is coupled between the first buried layer (120) and the extended drain (108, 156) to increase the breakdown voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.