Ridge waveguide semiconductor laser
US7187701B2 · kind B2 · utility
4Cited by
4References
7Claims
0Family size
Assignee
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Key dates
| Filing date | Mar 15, 2004 |
| Grant date | Mar 6, 2007 |
| Priority date | — |
| Expiry date | Jan 18, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/34366
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A ridge waveguide semiconductor laser includes an active layer, semiconductor layers on the active layer and having a ridge-shaped waveguide, an insulating film on the semiconductor layer, a first electrode layer in contact with the semiconductor layer through an opening in the insulating film, and a second electrode layer on the first electrode layer having a stripe shape and extending along the waveguide. A distance from an end face of a resonator of the laser to an edge of the second electrode layer does not exceed 20 μm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.