Method and apparatus for producing semiconductor or metal particles
US7189278B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 18, 2003 |
| Grant date | Mar 13, 2007 |
| Priority date | — |
| Expiry date | Mar 20, 2024 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB22F2009/0892
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A method for producing semiconductor or metal particles comprises the steps of: storing a semiconductor or metal melt in a crucible having a nozzle; supplying a gas comprising at least one selected from the group consisting of He, Ne, Ar, Kr and Xe into the crucible such that the pressure of the supplied gas in a space over the melt in the crucible is higher than the pressure of a gaseous phase into which the melt is dropped; dropping the melt from the nozzle into the gaseous phase by the pressure of the gas to form liquid particles; and solidifying the liquid particles in the gaseous phase to obtain semiconductor or metal particles. The crucible comprises at least one selected from the group consisting of hexagonal BN, cubic BN, Si3N4, TiB2, ZrB2, zirconia and stabilized zirconia at least near the nozzle. Alternatively, the crucible comprises quartz glass at least near the nozzle and has a heat-resistant support member for suppressing deformation caused by a decrease in viscosity of the quartz glass at high temperatures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.