Semiconductor diode and method therefor
US7189610B2 · kind B2 · utility
0Cited by
4References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 18, 2004 |
| Grant date | Mar 13, 2007 |
| Priority date | — |
| Expiry date | Dec 1, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/23
Abstract
In one embodiment, a diode is formed with anodes on two surfaces of a semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.